View MAQ31751AB_8851877.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ma31751 1/17 the ma31751 memory management unit/block protect unit (mmu/bpu) is an optional chip which may be used to expand the capabilities of the ma31750. user configurable, the ma31751 can perform as an mmu, a bpu or both mmu and bpu, conforming to mil-std-1750a and 1750b. mmu mapping and bpu protection for 1m words of memory is provided by the internal memory. up to 16 ma31751 devices can be used to give 16m words of logical mapped onto 8m words of physical address space with protection in 1750b mode. the ma31751 is designed to have a simple interface to both the cpu and the system bus with the minimal number of control lines. this reduces board space and simplifies system design. the ma31751 traps the mmu and bpu xio commands to program and read the logical to physical mapping and memory access control. this provides simple memory management as defined by the mil-std-1750. figure 1: chip control signals features n mll-std-1750a/b compatible n radiation hard cmos/sos technology n user configurable as either a memory management unit (mmu) or a block protect unit (bpu) or both n memory management unit configuration ? 1 mword physical address space ? access lock and key of 4k-word blocks ? write/execute protection of 4k-word blocks n block protect unit configuration ? protection of 1k-word blocks ? global memory write protection during initialisation n direct memory access support a[0:15] as[0:3] ps[0:3] oin mion rdwn asin dsn dmakn csn resetn vdd gnd d[0:16] prpen mproen glpe ea[0:10] eas ma31751 cpu busses bus control chip control signals system signals system faults bpuvalidn hitmissn ma31751 memory management & block protection unit replaces june 1999 version, ds4083-2.0 ds4083-3.0 january 2000
ma31751 2/17 1.0 device operation the ma31751 is an interface device designed to increase the memory addressing capability of the ma31750 cpu. it is user configurable as an mmu and/or a bpu conforming to the mil-std-1750a and the proposed mil-std-1750b. the mmu provides expanded addressing and full access lock/key protection in both modes, together with write/execute protection on 4k pages. the bpu allows up to 1m words of memory to be protected in 1k blocks (mll-std-1750a). up to 8m words may be protected by multiple mmu/bpu units (draft mil-std-1750b). in 1750a mode, one ma31751 unit can act as both mmu and bpu for the maximum 1m words of address space. in 1750b mode, up to 8 ma31751 units may be used to provide the maximum bpu functions and up to 16 units for the maximum mmu functions. for any given physical memory location the mmu and bpu function may be split across two ma31751 devices depending on the logical to physical address mapping. 1.1 initialisation the ma31751 is initialised by the cpu when a system reset occurs. initially all mappings are set one to one to give a linear 1m word logical to physical mapping. the bpu defaults to no protection on a reset and requires 256 machine cycles (as pulsing) to set the internal bpu memory. the cpu recognises the presence of the mmu/bpu by the setting of appropriate bits in the configuration register. when the configuration register is read, the ma31751 stores mmu, bpu, parity and 1750 mode information internally. the cpu may change the mapping and access protection when it is in privileged instruction mode using xio commands 4d00 to 52ff as defined in mil-std-1750. 1.2 address translation and protection the mmu maps system memory into 4k word pages by the mechanism shown in figure 3. a page is a block of physical memory which is uniquely specified by the physical page address, the ppa. a given address within any page is specified by the least significant 12 bits of the cpu address bus. one page register has the physical page address and the access control information relating to one page. there are 512 page registers, organized into 16 sets. the 16 sets are addressed by as[0:3]. each set has two groups of page registers, one for operand memory space and one for instruction memory space. these are addressed by oin. each group contains 16 page registers accommodating a total of 256 registers for each of operand and instruction memory space. the mmu also checks for protection violation by comparing the processor state (ps), read from the cpu status word, with the access lock (al) field in the page register. an additional bit in each page register allows the system to disable writes to operand pages or reads (execution) of instruction pages. if any memory violation occurs, the memory protect output (mproen) is asserted low. this typically causes a bus-fault-timeout on the processor which aborts the error cycle. figure 2 illustrates the access key mapping mechanism. when memory transactions are controlled by the ma31750, the as[0:3] and ps[0:3] bits necessary to perform the address translation and access protection functions respectively, are obtained from a copy of the processor status word held by the mmu. modifications to the cpu status word are reflected in the mmu copy. figure 4 illustrates the standard way to map the logical cpu addresses, as[0:3] and pb[0:3] onto the physical extended address bus for both 1750a (a 20-bit physical address) and for 1750b (a 23-bit physical address). figure 5 shows the various selections to achieve the required memory size and protection. 1.3 block protection the presence of a bpu in the system is determined from the cpu configuration word. a bpu present in the system offers protection of the physical memory in 1k blocks. it takes the physcial address from the ea bus hence the bpu protection cannot start until the mmu lookup has completed and eas rises. if no mmu is present, the physical address is read from the processor address bus. the address selects the relevant 16 bit word from the bpu ram or cache. each bit in this word represents the protection on 1k of physical memory. any attempt to write a protected block results in an access violation error from the bpu. note: mil-std-1750 states that the msb of the block protect register (bpr) should protect the least significant address block. 1.4 direct memory access the ma31751 supports dma access within the expanded memory space, including translation and protection. when a dma controller is performing memory transactions, it must provide the as[0:3] and ps[0:3] signals to the inputs of the mmu for address translation and access protection. al code acceptable access key codes 0 1 2 3 4 5 6 7 8 9 a b c d e f 0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 0,a 0,b 0,c 0,d 0,e 0,1,2,3,4,5,6,7,8,9,a,b,c,d,e,f figure 2: access lock and key mapping
ma31751 3/17 al e res ppa w res al w res ppa ppa ppa al e res ppa al w res ppa al w res ppa al w res ppa 0 3 4 5 7 8 15 instruction operand lpa 4 16-bit logical address address of word within 4k page logical address of 4k page 8 bits 12 bits extended address address 8/11-bit address expansion 12-bit logical address 8 12 16 words 32 groups as ps from cpu status word dma as ps dmakn 5 group address oin lock and key access protection protect logic 4 4 access violation * * these 3 bits are reserved in 1750a. in 1750b they are used as extra ppa bits to form the msb's of the extended address bus. * * * * mproen execute protect write protect 3 3 bits 1750b 12 lsb of address page register page register figure 3: mmu memory mapping mechanism
ma31751 4/17 as[0:3] a[0:15] ea[3:10] a[4:15] pb[0:3] as[0:3] a[0:15] ea[0:10] a[4:15] 1750a addressing logical physical 1750b addressing logical* physical 1750a extended physical address [0:19] 1750b extended physical address [0:22] ea3 a4 a15 as0 as3 a0 pa 0 pa19 ea10 a15 pa 0 pa22 a15 a4 ea10 ea0 pb0 pb3 as3 as0 a15 a0 * there are 16m words of logical address in 1750b. the 16mword logical to 8mword physical mapping is user defined. figure 4: extended address mapping in 1750a/b mode figure 5: ma31751 selection chart for varying memory requirements addressable physical memory addressable logical memory is bpu protection required? mode number of mmus number of bpus number of ma31751s required 64kw 64kw no a 0 0 0 1mw 1mw no a 1 0 1 64kw 64kw yes a 0 1 1 1mw 1mw yes a 1 1 1 64kw 64kw no b 0 0 0 8mw 1mw no b 1 0 1 8mw 2mw no b 2 0 2 8mw 4mw no b 4 0 4 8mw 8mw no b 8 0 8 8mw 16mw no b 16 0 16 64kw 64kw yes b 0 1 1 8mw 1mw yes b 1 8 8 8mw 2mw yes b 2 8 8 8mw 4mw yes b 4 8 8 8mw 8mw yes b 8 8 8 8mw 16mw yes b 16 8 16 notes: 1. memory is specified in terms of addressable instruction space. 2. it is assumed that the whole of the physical address space is used in 1750b - if this is not the case the number of ma31751 chips may be reduced.
ma31751 5/17 2.0 timing considerations 2.1 mmu timings to enable a fast page register look-up time, the mmu has two fast translation cache registers. these hold the address translation information on the 4k memory page which is currently being accessed. when the cpu has control of the system, one cache register is for operand transfers and one for instruction transfers, as these often occur in different pages. the appropriate translation cache register is chosen by the operand/instruction (oin) signal from the cpu. when a dma has system control, the caches operate as read/write caches, the appropriate cache being selected by the rdwn signal. when either an instruction/read or an operand/write crosses a page boundary, one wait state may be added whilst the translation cache register is updated from internal memory. this system minimises the mmu overhead. 2.2 bpu timings a similar caching system is employed in the bpu section of the ma31751 to allow more rapid detection of access violations. if the physical address crosses a 16k block boundary, then one wait state may be added. different combinations of cache hits and misses give different access times if the ma31751 is acting as both an mmu and a bpu. if the logical address (from the cpu) gives an mmu cache hit, the physical address is looked-up from the translation cache register (operand or instruction, depending on oin). if the physical address gives a cache hit, the protection for the block is looked-up in the bpu cache register. this situation (both hits) gives the fastest access time. the access time is a maximum if both logical and physical addresses give cache misses. 3.0 outputs from the ma31751 3.1 prpen this signal goes active low if a parity error occurs on a memory access, ie. there is a parity error in the mmu page register. there is no parity checking on xio cycles, (this should be covered by the processor). 3.2 mproen this signal is always low when asin is low. on a memory access, with an mmu only present it stays low until the address translation is validated. if the translation is erroneous, it stays low, causing a machine cycle time-out. if a bpu is present with the mmu, an erroneous translation causes the output to stay low. if the translation is correct, mproen will still stay low until the bpu check has completed. if there is no block protection set, mproen goes high, allowing the cycle to proceed. if the block protection is set, mproen stays low and the cycle times out. in a bpu only system, mproen indicates whether or not the protection bit is set for the address being accessed. in a 1750b system with both an mmu and bpu present, mproen may glitch between the translation validation and the protection check (as the mmu and bpu functions may be on different devices). in this case, mproen should be gated with bpuvalidn being low before being input to the cpu. 3.3 bpuvalidn bpuvalidn falls to indicate that the output from the bpu is valid. if no bpu is present, bpuvalidn remains high. 4.0 pin descriptions a description of each pin function appears in figure 6. the acronym is presented first, followed by its function and description. timing characteristics of each of the functions are shown in section 6. all cmos compatible signals are protected by an electrostatic discharge (esd) protection circuit. throughout this data sheet, active low signals are denoted either by placing a bar over the signal name,or by following the signal name with an n suffix, e.g.,dsn. all unused inputs should be connected to their inactive state and should not be allowed to float.
ma31751 6/17 4.1 signal definitions pin name function description a00-a15 processor address bus an active-high address bus for addresses and xio commands. a15 is the lsb. d00-d16 system data bus data bus used to transfer data to and from the mmu/bpu. d15 is the lsb and d16 is the parity bit. ea00-ea10 extended address bus if the mmu is selected (using csn) then ea0-ea10 provides the system extended address. ea3-ea10 should be combined with a4-a15 from the processor to give the full 20 bit 1750a system address bus and ea0-ea10 with a4-a15 gives a 23 bit 1750b system address bus. (see fig 4).during xio transfers, ea7-10 mimic a0-a3 to present the full processor address to the system. when the mmu is not selected, ea0-ea10 become inputs to allow the bpu to protect the appropriate section of extended memory. asin address strobe in the rising edge of this active-high signal generated by the cpu or dma controller, indicates that a valid address is present on the ma31750. dsn data strobe the rising edge of this active-low signal generated by the cpu or dma controller, indicates that valid data is present on d00-d16 of the ma31750. eas extended address strobe the rising edge of this active-high signal indicates that a valid and stable extended address is available from the ma31751. this pin becomes an input when no mmu is selected and should be driven from the system address strobe. during xio cycles, eas follows asin. mion memory / io select this input is used to select between normal operation and command transfer (xio) mode. a high indicates memory whilst a low indicates io. this signal is provided by the cpu or the dma controller. rdwn read / write select this input indicates the direction of data transfer on the data bus. a high level indicates that the processor is reading the bus whilst a low level indicates that the processor is driving the bus. the input is driven by the cpu or the dma controller. oin operand / instruction select this input indicates the type of data on the data bus. a high indicates operand data whilst a low indicates the presence of instruction data. the signal is provided by the cpu or the dma controller. as0-as3 address state this bus comes from the dma controller during dma accesses. it is used by the mmu as part of the page selection operation. (during cpu operation, this information is read from the mmu? copy of the cpu status word). if no mmu function is required, these inputs should be tied to ground. ps0-ps3 processor state this bus comes from the dma controller during dma accesses. it is used by the mmu to provide lock and key protection on page accesses. (during cpu operation, this information is read from the mmu? copy of the cpu status word.) if no mmu function is required, these inputs should be tied to ground. system busses bus control extended memory control figure 6: pin description table
ma31751 7/17 miscellaneous error indication pin name function description mproen memory protect error the mproen output is always asserted low when asin is low. on an external memory cycle, mproen low at the end of the cycle indicates there has been a protection error in either the mmu or the bpu. a high indicates no error. mproen goes high after asin rising on xio cycles. prpen page ram parity error this active-low output is asserted low if a parity error is detected during an mmu/bpu memory transfer. resetn system reset active low device reset input. should be connected to system reset. csn mmu chip select a low on this input selects the mmu. in a 1750a system, this input may be tied to ground if mmu functions are required, or tied to mion if only bpu functions are required (must be active for xio cycles when the device may need to respond to an mmu/bpu xio command.) in 1750b, this input should be derived by decoding the pb[0:3] bus from the cpu. (note that in 1750b mode, one device is required per implemented page bank.) bpuvalidn bpu enabled and selected this output becomes active (low) when mproen is valid if there is at least one bpu present in the system . dmakn dma acknowledge this active-low input is used to select between the cpu and dma protection registers within the ma31751, and should be asserted low when the cpu has relinquished control to a dma in the system. dmakn active low means that the mmu gets the as[0:3] and ps[0:3] information from the pins rather than from the internal copy of the cpu status word. the signal is driven by the system. glpe global protect enable this active-high signal goes high in bpu mode following a system reset to indicate that the memory system is globally write-protected. the signal is set low by the xio mpen command. gple is inactive high when the bpu functions are disabled. hitmissn cache hit/miss a high on this output indicates that a memory cycle is a cache hit - a low indicates a cache miss. this output goes low when asin is low and rises on memory cycles when a hit has been validated. this output goes high on xio cycles. vdd power supply 5v dc power supply input. gnd ground 0v reference point. power figure 6: pin description table (continued)
ma31751 8/17 5.0 dc parameters - absolute maximum ratings parameter min max units supply voltage -0.5 7 v input voltage -0.3 v dd +0.3 v current through any pin -20 +20 ma except v dd and gnd operating temperature -55 125 c storage temperature -65 150 c note: stresses above those listed may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions, or at any other condition above those indicated in the operations section of this specification, is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. figure 7: absolute maximum ratings 5.1 dc parameters - normal operating conditions total dose radiation not exceeding 3x10 5 rad(si) symbol parameters conditions min typ max units vdd supply voltage - 4.5 5.0 5.5 v vih input high voltage - 80% vdd - - v vil input low voltage - - - 20% vdd v voh output high voltage ioh=-5ma vdd-0.5 - - v vol output low voltage iol=5ma - - vss+0.4 v iih input high current (note 1) - - - 10 m a iil input low current (note 1) - - - -10 m a iozh i/o tristate high current - - 50 - m a iozl i/o tristate low current - - -50 - m a iddyn dynamic supply current - - - 50 ma idds static supply current - - 0.2 10 ma vdd=5v 10% over full operating temperature range. mil-std-883, method 5005, subgroups 1, 2, 3 note 1: guaranteed but not measured at -55 c figure 8: operating dc parameters subgroup definition 1 static characteristics specified in figure 8 at +25 c 2 static characteristics specified in figure 8 at +125 c 3 static characteristics specified in figure 8 at -55 c 7 functional characteristics specified at +25 c 8a functional characteristics specified at +125 c 8b functional characteristics specified at -55 c 9 switching characteristics specified in figure 10 at +25 c 10 switching characteristics specified in figure 10 at +125 c 11 switching characteristics specified in figure 10 at -55 c figure 9: definition of subgroups
ma31751 9/17 6.0 timing parameters parameter min max units 1 dsn falling to data bus active (xio read) - 40 ns 2 dsn falling to data from mmu valid (xio read) - 90 ns 3 data valid after dsn rising (xio read) 10 - ns 4 data bus inactive after dsn rising (xio read) - 45 ns 5 address and control setups to asin rising 15 - ns 6 address and control hold after asin falling 5 - ns 7 csn setup to dsn rising (1750b) (xio) 75 - ns 8 csn hold after dsn rising (1750b) (xio) 0 - ns 9 data hold after dsn rising (xio write) 10 - ns 10 data setup to dsn rising (xio write) 5 - ns 11 asin falling to eas falling - 30 ns 12 extended address valid to eas rising 5 30 ns 13 asin rising to ea bus valid (mmu cache hit) - 40 ns 14 ea bus valid to prpen active 5 15 ns 15 asin rising to ea bus valid (mmu cache miss) - 80 ns 16 asin rising to mproen active (mmu cache hit) - 60 ns 17 asin rising to mproen active (mmu cache miss) - 105 ns 18 asin rising to mproen active (2 cache hits) - 60 ns 19 asin rising to mproen active (1 miss, 1 cache hit) - 105 ns 20 asin rising to mproen active (no mmu, bpu miss) - 50 ns 21 asin rising to mproen active (mmu and bpu miss) - 185 ns 22 mproen setup to bpuvalidn falling 5 - ns 23 asin rising to glpe falling - - ns 24 resetn falling to glpe/mproen/prpen rising - - ns 25 mproen valid after asin falling 5 - ns 26 asin rising to eas rising (xio cycles) - 15 ns 27 dmakn setup to asin rising 10 - ns 28 dmakn hold after asin falling 0 - ns 29 ps[0:3] to mproen valid 5 40 ns 30 prpen hold after asin falling 10 - ns mil-std-883, method 5005, subgroups 9, 10 and 11 figure 10: timing parameters
ma31751 10/17 figure 11: ma31750 xio read of mmu figure 12: ma31750 xio write to mmu asin a0- a15 rdwn oin mion d0- d15 (from cpu) 1 2 (from cpu) (from mmu) possible write data 4 5 6 3 dsn csn 8 7 eas 26 7.0 timing diagrams d0- d15 data from ma31750 9 asin a0- a15 rdwn oin mion (from cpu) (from cpu) 10 dsn csn 7 8 6 5
ma31751 11/17 figure 13: mmu address translation (cache hit) figure 14: mmu address translation (cache miss) asin a0-a15 as0-3 mion rdwn oin dmakn ea0:10 (from cpu) (from cpu) eas 11 (from mmu) from mmu with cache hit 12 dsn 13 prpen 14 5 27 6 28 30 asin a0-a15 as0-3 mion rdwn oin dmakn ea0:10 (from cpu) (from cpu) eas 11 (from mmu) 15 dsn prpen 14 12 5 27 6 28 30
ma31751 12/17 figure 15: mmu timing with no bpu figure 16: mmu and bpu timings figure 17: reset and enable timings figure 18: processor state timings 16-17 asin ea[0:10] ea s mproen bpuvalidn mio n 25 asin ea[0:10] eas mproen bpuvalidn 18-21 22 asin ea[0:10 ] glpe resetn mproen 23 24 25 wrn access violation valid access mem write enabled asin ea0:10 ps0:3 mproen 29 29
ma31751 13/17 8.0 packaging information 8.1 flatpack pinout figure 19: 68 pin lead flatpack - package style f 9 8 7 6 5 4 3 2 1 6 8 6 7 6 6 6 5 pin 1 index top view 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 2 7 2 8 2 9 3 0 31 3 2 3 3 3 4 3 5 3 6 3 7 3 8 3 9 4 0 41 4 2 4 3 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 6 4 6 3 6 2 61 ea7 ea6 ea5 ea4 ea3 ea2 ea1 ea0 as0 as1 as2 as3 ps0 ps1 ps2 ps3 mion d1 2 d11 d1 0 d9 d 8 d 7 d 6 d5 d4 d3 d2 d1 d 0 oi n rdwn asin hitmissn vss a15 a14 a13 a12 a11 a10 a9 a8 a7 a6 a5 a4 a3 a2 a1 a0 d13 d14 d15 d16 mproen prpen bpuvalidn resetn csn dsn dmakn glpe vdd eas ea10 ea9 ea8
ma31751 14/17 8.2 flatpack dimensional drawing figure 20: dimensional drawing of 68 pin lead flatpack - package style f 9 8 7 6 5 4 3 2 1 68 67 66 65 pin 1 index top view 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 64 63 62 61 0.085 0.065 0.050 nom 0.020 0.016 0.415 0.400 0.960 - 0.940 0.107 max 0.012 0.008
ma31751 15/17 8.3 pga pinout and dimensioned drawing pin function pin function pin function pin function a1 ps3 c1 ps0 g9 d7 k3 vdd a2 a2 c2 ps2 g10 d6 k4 dmakn a3 a4 c3 mion h1 ea3 k5 csn a4 a5 c8 gnd h2 ea6 k6 resetn a5 a7 c9 asin h3 ea8 k7 prpen a6 a8 c10 d0 h8 d12 k8 mproen a7 a10 d1 as2 h9 d10 k9 d15 a8 a12 d2 as3 h10 d8 k10 d11 a9 a13 d9 oin j1 ea5 a10 a15 d10 d1 j2 ea7 b1 ps1 e1 as0 j3 ea10 b2 a0 e2 as1 j4 glpe b3 a1 e9 d2 j5 dsn b4 a3 e10 d3 j6 bpuvalidn b5 a6 f1 ea0 j7 d16 b6 a9 f2 ea1 j8 d14 b7a11f9d5j9d13 b8 a14 f10 d4 j10 d9 b9 hitmissn g1 ea2 k1 ea9 b10 rdwn g2 ea4 k2 eas figure 21: pga pinout and dimensioned drawing a a aa aa a a a a aa aa aa aa bottom view 1 2 3 4 5 6 7 8 9 10 ab cdef ghj k .050 +/- .010 .180 +/-.010 .018 +/- .100 max 1.060 sq +/- .020 .10 0 .180 +/- .010 .045 +/- .005 top view pin a1 index
ma31751 16/17 9.0 radiation tolerance total dose radiation testing for product procured to guaranteed total dose radiation levels, each wafer lot will be approved when all sample devices from each lot pass the total dose radiation test. the sample devices will be subjected to the total dose radiation level (cobalt-60 source), defined by the ordering code, and must continue to meet the electrical parameters specified in the data sheet. electrical tests, pre and post irradiation, will be read and recorded. dynex semiconductor can provide radiation testing compliant with mil-std-883 test method 1019, ionizing radiation (total dose). total dose (function to specification)* 3x10 5 rad(si) transient upset (stored data loss) 1x10 11 rad(si)/sec transient upset (survivability) >1x10 12 rad(si)/sec neutron hardness (function to specification) >1x10 15 n/cm 2 single event upset** <1x10 -10 errors/bit day latch up not possible * other total dose radiation levels available on request ** worst case galactic cosmic ray upset - interplanetary/high altitude orbit figure 22: radiation hardness parameters 10.0 other information reference: ma31751 application note 5 - detailed device description.
ma31751 17/17 11.0 ordering information for details of reliability, qa/qc, test and assembly options, see manufacturing capability and quality assurance standards section 9. unique circuit designator s r q radiation hard processing 100 krads (si) guaranteed 300 krads (si) guaranteed radiation tolerance a f pin grid array flatpack (solder seal) package type qa/qci process (see section 9 part 4) test process (see section 9 part 3) assembly process (see section 9 part 2) l c d e b s rel 0 rel 1 rel 2 rel 3/4/5/stack class b class s reliability level max31751xxxxx customer service centres france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 north america tel: 011-800-5554-5554. fax: 011-800-5444-5444 uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 germany tel: 07351 827723 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (831) 440-1988. fax: (831) 440-1989 / tel: (949) 733-3005. fax: (949) 733-2986. uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ? dynex semiconductor 2000 publication no. ds4083-3 issue no. 3.0 january 2000 technical documentation C not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. unit 7 - 58 antares drive, nepean, ontario, canada k2e 7w6. tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to f ully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand.

▲Up To Search▲

Price & Availability of MAQ31751AB

	To Download MAQ31751AB Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .